Ultra clean processing of semiconductor surfaces IX (UCPSS by Paul Mertens; Marc Meuris; Marc Heyns

By Paul Mertens; Marc Meuris; Marc Heyns

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Additional resources for Ultra clean processing of semiconductor surfaces IX (UCPSS 2008) : 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) held in Bruges, Belgium, September 22-24, 2008

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A 1 MHz nozzle is moved at constant speed along the y-axis above a wafer rotating at 1000 rpm. The height of the nozzle H can be adjusted accurately with respect to the centre of the wafer. To avoid standing waves the angle θ of the nozzle can be varied in the xz-plane with respect to the z axis. 24 Ultra Clean Processing of Semiconductor Surfaces IX Particle Removal Efficiency (%) Results and discussion Because of the angular symmetry of the setup the particle removal efficiency η is expected to be identical at a specific radial distance R.

Accelerated wetting is found for the oxygen dissolved water but not for nitrogen dissolved water and only near the megasonic agitator in the non-rotating wafer case. In Fig. 1(b) on the right there is a relationship between dissolved gas type and ionization potential for cleaning in water. He and CO2 show the most impact to cleaning as compared to nitrogen, argon and oxygen. Because the cleaning was run at equilibrium the gas concentration is different due to the gas solubility. It is difficult to increase the concentration of helium or lower the concentration for carbon dioxide due to gas solubility limitations.

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