Phase Change Memory: From Devices to Systems by Moinuddin K. Qureshi, Sudhanva Gurumurthi, Bipin Rajendran

By Moinuddin K. Qureshi, Sudhanva Gurumurthi, Bipin Rajendran

As traditional reminiscence applied sciences similar to DRAM and Flash run into scaling demanding situations, architects and procedure designers are compelled to examine substitute applied sciences for construction destiny computers. This synthesis lecture starts by means of directory the necessities for a subsequent new release reminiscence expertise and in short surveying the panorama of novel non-volatile thoughts. between those, section swap reminiscence (PCM) is rising as a number one contender, and the authors speak about the cloth, equipment, and circuit advances underlying this intriguing know-how. The lecture then describes architectural recommendations to allow PCM for major thoughts. ultimately, the authors discover the influence of such byte-addressable non-volatile thoughts on destiny garage and procedure designs. desk of Contents: subsequent iteration reminiscence applied sciences / Architecting PCM for major stories / Tolerating sluggish Writes in PCM / put on Leveling for sturdiness / put on Leveling less than antagonistic Settings / mistakes Resilience in part switch stories / garage and method layout With rising Non-Volatile thoughts

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Forced writes are detrimental for performance as writes get priority over read requests. Write Cancellation can be controlled to reduce such episodes of forced writes using threshold-based Write Cancellation. 4. 4 37 THRESHOLD-BASED WRITE CANCELLATION When the service for a write request is close to completion, and a read request arrives, the Write Cancellation policy still cancels the service for that write request. Such episodes of Write Cancellation can be avoided by using a simple time-keeping technique, called Write Cancellation with Static Threshold (WCST).

Iteration3 of the iterative write begins once the read request completes service. Thus, Write Pausing allows the read to be performed transparently at pause points. 2 (the newly added stage is shaded). At each iteration the device recalculates a new programming pulse depending on the state of the PCM cell. However, this writing step can be performed after servicing another read request as well. So, another stage is added to the algorithm that checks if there is a pending read request. If so, the pending read request is performed and the cell writing is resumed as soon as the service for the read request is completed.

Iterative programming techniques are necessary to attain tight resistance distributions in MLC PCM [14]. With suitable write-read-verify programming schemes, it is possible to achieve well controlled distributions even for 4-bit MLC demonstrations with a small number (5 − 6) of iterations in conventional PCM devices [132]. An alternative strategy for MLC realization is to engineer the cell structure specifically for programming to intermediate resistance levels – examples of this include incorporating multiple chalcogenide layers with varying electrical resistivity [163] or cell structures with distinct parallel current paths [135].

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