ISTFA '96 : proceedings of the 22nd International Symposium by Not Available

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Istfa '96: court cases of the twenty second overseas Symposium for trying out and Failure research 18-22 November 1996 l. a., California

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Extra resources for ISTFA '96 : proceedings of the 22nd International Symposium for Testing and Failure Analysis : 18-22 November 1996, Los Angeles, California

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It was already known that the leakage was easily lost if the package was mishandled. This caused the emphasis to be on non-destructive testing. Two simultaneous tests were proposed late in the day. Each test was to be done independently at different labs. The first test was to measure the resistance from pin to pin while shining a bright light on the package surface. This test indicated a strong photoresponse when a laser pointer was scanned over the IC surface. This non-destructive test showed conclusively that leakage was occurring on the package surface.

The material deposited in this window shows a slightly brighter contrast (bright "pillar") A less obvious problem is the fact that the FIB-deposited conductor in the via features a higher resistivity as compared to the conductor deposited on a flat surface. Therefore, the resistance in a FIB via can be prohibitively high, even if the via is completely filled. In order to understand this, the different effects in FIB conductor deposition have to be considered: (i) an organo-metallic precursor is fluxed over the sample surface, where a monolayer of precursor molecules adsorbes; (ii) the accelerated Ga ion beam dissociates the adsorbed precursor molecules into an adsorbed metal ion, and an organic radical which is supposed to desorb from the sample surface.

Fig. 7)1 2LM Si. 5 um technology generation, this is not always true anymore. 5 urn silicon. Only top level metal is clearly visible, whereas some details of metal 2 can be seen. Even with the best imaging conditions, metal 1 is completely hidden. 35 um 5LM Si Therefore, it is obvious that the FIB operator needs a little more information to localise the lower level metallization on these modern processes. The most simple way would be to have a system which is accurate enough to allow for blind navigation, based on coordinates only (after a one-time alignment in the corners of an IC).

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