By ASM International
This quantity gains the most recent examine and functional info from the most advantageous occasion for the microelectronics failure research group. The papers disguise a variety of trying out and failure research themes of useful worth to somebody operating to notice, comprehend, and do away with digital gadget and procedure disasters. Case histories and evaluate papers are incorporated, in addition to courses to new and specified instruments and methodologies, purposes and results.
Includes papers in relation to the research of built-in circuits, MEMS, nanodevices, optoelectronics, discrete and passive elements, digital packaging, card point elements, and digital platforms within the following areas:
New and rising analytical innovations
Diagnostic trying out and debug
Physical fault isolation (optical, thermal, magnetic, etc.)
Electrical characterization and nanoprobing
Scanning probe know-how
Microscopy (SEM, TEM, mild microscopy, etc.)
Physical circuit-edit recommendations (FIB, laser, etc.)
Sample instruction (milling, sharpening, etching, grinding, etc.)
Chemical and fabrics research (Auger, SIMS, RBS, etc.)
Metrology and in-line characterization and research
Yield and reliability enhancement
Analytical concept technique
Laboratory and environmental security and eco-friendly approaches
Laboratory administration and finance
Future demanding situations, specifically these in terms of the deep nanoscale regime
Read or Download ISTFA 2012 : conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA PDF
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Additional resources for ISTFA 2012 : conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA
A comparative method was applied both on EOTPR and TDR by using the reference good sample, bare substrates without silicon die and silicon TSV interposer. measurement result is shown in Fig. 7. It revealed that the failed unit waveform showed a positive peak indicating an open circuit prior to the bare substrate termination. This indicates that the fault is inside the package substrate. Fig. 5 showed conventional TDR measurement result. It indicated that the failed sample waveform overlapped with the reference interposer sample, which suggested the open location was between the silicon die and interposer.
As expected, the PSF shows significant deviation from the diffraction limited ideal at a nominal focal translation of 0 µm (Figs. 8a and 8c). Consistent with the simulations shown previously in Fig. 4, it is possible to increase the peak intensity of the PSF by offsetting the focal translation, but this does not compensate the spherical aberrations (see Figs. 8b and 8d). However, at the nominal focal translation of 0µm, applying a compensating spherical aberration of the wavefront with the DM results in a narrower PSF with significantly larger intensity (Figs.
Bottom: Table comparing actual distance between faults and those determined from EOTPR measurement. 4 SEM image of open location from top of the interposer. Bare substrate TSV interposer Open failure unit Good Fig. 5 TDR results for open failure sample with TSV structure. 23 Fig. 6 EOTPR results for open failure with TSV structure. Conventional TDR was also performed on the same sample for comparison. A comparative method was applied both on EOTPR and TDR by using the reference good sample, bare substrates without silicon die and silicon TSV interposer.