Flash Memories by Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni

By Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni

A Flash reminiscence is a Non unstable reminiscence (NVM) whose "unit cells" are fabricated in CMOS expertise and programmed and erased electrically. In 1971, Frohman-Bentchkowsky built a folating polysilicon gate tran­ sistor [1, 2], during which scorching electrons have been injected within the floating gate and got rid of by way of both Ultra-Violet (UV) inner photoemission or by way of Fowler­ Nordheim tunneling. this is often the "unit mobile" of EPROM (Electrically professional­ grammable learn in simple terms Memory), which, together with a unmarried transistor, might be very densely built-in. EPROM stories are electrically programmed and erased by means of UV publicity for 20-30 minutes. within the overdue Nineteen Seventies, there were many efforts to advance an electrically erasable EPROM, which ended in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use sizzling electron tunneling for software and Fowler-Nordheim tunneling for erase. The EEPROM cellphone contains transistors and a tunnel oxide, hence it really is or 3 times the scale of an EPROM. Successively, the mix of scorching provider programming and tunnel erase used to be rediscovered to accomplish a unmarried transistor EEPROM, referred to as Flash EEPROM. the 1st phone according to this idea has been offered in 1979 [3]; the 1st advertisement product, a 256K reminiscence chip, has been offered by way of Toshiba in 1984 [4]. The marketplace didn't take off until eventually this know-how was once confirmed to be trustworthy and manufacturable [5].

Show description

Read Online or Download Flash Memories PDF

Similar design & architecture books

Operational Amplifiers: Theory and Design

Operational Amplifiers – conception and layout, moment version provides a scientific circuit layout of operational amplifiers. Containing cutting-edge fabric in addition to the necessities, the booklet is written to entice either the circuit fashion designer and the method dressmaker. it really is proven that the topology of all operational amplifiers might be divided into 9 major total configurations.

Computer and Information Security Handbook

The second edition of this complete guide of desktop and knowledge security provides the main whole view of laptop safety and privateness to be had. It bargains in-depth assurance of protection conception, know-how, and perform as they relate to confirmed applied sciences in addition to contemporary advances.

Languages, Design Methods, and Tools for Electronic System Design: Selected Contributions from FDL 2015

This booklet brings jointly a variety of the easiest papers from the eighteenth version of the discussion board on specification and layout Languages convention (FDL), which came about on September 14-16, 2015, in Barcelona, Spain. FDL is a well-established foreign discussion board dedicated to dissemination of analysis effects, functional stories and new rules within the software of specification, layout and verification languages to the layout, modeling and verification of built-in circuits, advanced hardware/software embedded structures, and mixed-technology platforms.

Extra info for Flash Memories

Sample text

These two currents are shown in Fig. 15 [27]. Band-to-band tunneling (BBT) occurs when band-bending is higher than the energy gap of the semiconductor, and the surface electric field is higher than 1 MV / cm. In this condition, tunneling of electrons from the valence band to the conduction band becomes significant, and holes are left in the valence band. Electrons are collected at the source terminal, while holes at the substrate contact, thus generating the leakage current. e. on the voltage drop between source and gate.

IRPS, p. 158. , Kreifels J. and Wells S. (1988) "An in-system reprogrammable 256KCMOS Flash memory", ISSCC Tech. , p. 132. , Nguyen T. and Ricco B. (1988) "High-field-induced degradation in ultra thin Si0 2 films". IEEE Trans. on Electron Devices, 35, p. 2259. , Annunziata R. and Cappelletti P. (1996) "Non volatile memories: issues, challenges and trends for the 2000's scenario". Proc. of ESSDERC, p. 12l. [19] Rodjy N. 85/-Lm double metal CMOS technology for 5 V Flash EPROM memories with sector erase".

46, p. 1288. [4] Frohman-Bentchkowsky D. (1971) "A fully decoded 2048-bit electrically programmable MOS-ROM". IEEE ISSCC Tech. , p. 80. R. et al. (1967) "The variable threshold transistor, a newly electrically alterable nondestructive read-only storage device". IEDM Tech. Dig .. H. (1998) "SONOS nonvolatile semiconductor memories". E. D. ) Nonvolatile Semiconductor Memory Technology. A comprehensive guide to understanding and using NVSM devices, IEEE Press, Chapter 5, p. 309. , Troutman B. and Wang S.

Download PDF sample

Rated 4.76 of 5 – based on 44 votes